Bi-directional ESD protection circuit
US9019670B2 · kind B2 · utility
2Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2013 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Jun 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02H9/046
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A structure is designed with an external terminal (100) and a reference terminal (102). A first transistor (106) is formed on a substrate. The first transistor has a current path coupled between the external terminal and the reference terminal. A second transistor (118) has a current path coupled between the external terminal and the substrate. A third transistor (120) has a current path coupled between the substrate and the reference terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.