Method of programming a non-volatile resistive memory
US9019749B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 7, 2014 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Feb 7, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0083
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for pre-programming a matrix of resistive non-volatile memory cells, with said memory cells comprising a dielectric material positioned between two conducting electrodes, with said memory cells being initially in an original resistive state (original HRS) and the dielectric material being able to be so electrically modified as to bring the memory cell from the original resistive state (original HRS) to at least another resistive state (LRS, programmed HRS) wherein the resistance of the memory cell is at least twice and preferably at least ten times lower than the resistance of the memory cell in the original resistive state (original HRS), at least for a reading voltage interval, characterized in that the method comprises the following steps:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.