Hybrid silicon laser-quantum well intermixing wafer bonded integration platform for advanced photonic circuits with electroabsorption modulators

US9020002B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Matthew Sysak · Lompoc, US
• John E. Bowers · Lompoc, US
• Alexander W. Fang · Goleta, US
• Hyundai Park · Goleta, US

Key dates

• Filing date: Sep 13, 2013
• Grant date: Apr 28, 2015
• Expiry date: Sep 13, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3414
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.