Biosensing well array with protective layer
US9023674B2 · kind B2 · utility
53Cited by
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20Claims
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Key dates
| Filing date | Sep 20, 2013 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Sep 20, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET includes a microwells having a sensing layer, a top metal stack under the sensing layer, and a multi-layer interconnect (MLI) under the top metal stack. The top metal stack includes a top metal and a protective layer over and peripherally surrounding the top metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.