Method of patterning features of a semiconductor device
US9023695B2 · kind B2 · utility
5Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2013 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Mar 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method of semiconductor device fabrication including forming a mandrel on a semiconductor substrate is provided. The method continues to include oxidizing a region the mandrel to form an oxidized region, wherein the oxidized region abuts a sidewall of the mandrel. The mandrel is then removed from the semiconductor substrate. After removing the mandrel, the oxidized region is used to pattern an underlying layer formed on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.