Etchant composition and manufacturing method for thin film transistor using the same
US9023735B2 · kind B2 · utility
3Cited by
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20Claims
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Key dates
| Filing date | Dec 27, 2012 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Mar 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An etchant composition includes ammonium persulfate (((NH4)2)S2O8), an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, a phosphate-containing compound, a chloride-containing compound, and residual water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.