Oxide sintered body and sputtering target
US9023746B2 · kind B2 · utility
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Key dates
| Filing date | Feb 9, 2012 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Feb 9, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/77
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is an oxide sintered body suitably used for the production of an oxide semiconductor film for a display device, wherein the oxide sintered body has both high conductivity and relative density, and is capable of depositing an oxide semiconductor film having high carrier mobility. This oxide sintered body is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide, and when an EPMA in-plane compositional mapping is performed on the oxide sintered body the percentage of the area in which Sn concentration is 10 to 50 mass % in the measurement area is 70 area percent or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.