Semiconductor light emitting device

US9024293B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Koichi Tachibana · Kawasaki, JP
• Toshiki Hikosaka · Yokohama, JP
• Shigeya Kimura · Yokohama, JP
• Hajime Nago · Yokohama, JP
• Shinya Nunoue · Ichikawa, JP

Key dates

• Filing date: Jan 14, 2014
• Grant date: May 5, 2015
• Expiry date: Jan 14, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8252

Abstract

According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is provided between the semiconductor layers and includes barrier layers and well layers alternately stacked. An n-side end well layer which is closest to the n-type semiconductor layer contains InwnGa1-wnN and has a layer thickness twn. An n-side end barrier layer which is closest to the n-type semiconductor layer contains InbnGa1-bnN and has a layer thickness tbn. A p-side end well layer which is closest to the p-type semiconductor layer contains InwpGa1-wpN and has a layer thickness twp. A p-side end barrier layer which is closest to the p-type semiconductor contains InbpGa1-bpN and has a layer thickness tbp. A value of (wp×twp+bp×tbp)/(twp+tbp) is higher than (wn×twn+bn×tbn)/(twn+tbn) and is not higher than 5 times (wn×twn+bn×tbn)/(twn+tbn).