Sensor and method for manufacturing the same
US9024320B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Nov 15, 2012 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Nov 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/189
Abstract
Embodiments of the present invention disclose a sensor and a method for manufacturing the same, the sensor comprising a plurality of sensing units arranged in array, each of which comprises a thin film transistor device and a photodiode sensor device and the photodiode sensor device comprising: a receiving electrode connected with a drain of the thin film transistor device, a photodiode located on the receiving electrode and covering the thin film transistor device, a transparent electrode on the photodiode and a biasing line connected with the transparent electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.