Semiconductor light-emitting structure

US9024351B2 · kind B2 · utility

Assignee

• Huga Optotech Inc. · TW

Inventors

• Der-Wei Tu · Taipei, TW
• Wei-Chih Wen · Hsinchu, TW
• Tai-Chun Wang · Hsinchu, TW
• Po-Hung Lai · Hsinchu, TW
• Chih-Ping Hsu · 埔鹽鄉, TW

Key dates

• Filing date: Mar 28, 2012
• Grant date: May 5, 2015
• Expiry date: Mar 28, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/034

Abstract

A semiconductor light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer, an electrode, an insulating layer, and an adhesive layer is provided. The light-emitting layer is disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer. The electrode is disposed on the first conductive type semiconductor layer. The insulating layer covers a part of the first conductive type semiconductor layer and the electrode. The adhesive layer is disposed between the electrode and the insulating layer so as to bond the electrode and the insulating layer.