Patent · US Active

Sub-pixel nBn detector

US9024359B2 · kind B2 · utility

3Cited by
12References
28Claims
0Family size

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Inventors

Key dates

Filing dateJan 5, 2012
Grant dateMay 5, 2015
Priority date
Expiry dateJun 14, 2033

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/50

Abstract

A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a bather layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.