Double side wafer process, method and device
US9024408B2 · kind B2 · utility
1Cited by
4References
21Claims
0Family size
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Key dates
| Filing date | Dec 29, 2010 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Mar 22, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P15/00
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A method of manufacturing double-sided semiconductor die by performing a first plurality of processes to a first side of a wafer and performing a second plurality of processes to a second side of the wafer, thereby forming at least a first semiconductor device on the first side of the wafer and at least a second semiconductor device on the second side of the wafer. The wafer may be cut to form a plurality of die having at least one semiconductor device on each side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.