Method of manufacturing semiconductor device
US9024454B2 · kind B2 · utility
1Cited by
17References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2014 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Jun 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To improve reliability of a semiconductor device in which wire bonding using a wire made of copper is performed. A semiconductor device is configured so that one of end parts (wide width part) of a copper wire is joined via a bump on a pad (electrode pad) formed over a main surface (first main surface) of a semiconductor chip of the semiconductor device. The bump is made of gold, which is a metal material having a hardness lower than that of copper, and the width of the bump is narrower than the width of the wide width part of the wire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.