Nonvolatile memory device and method of programming the same
US9025383B2 · kind B2 · utility
19Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2012 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | May 7, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method is provided for programming a nonvolatile memory device, which includes multiple memory cells connected in series in a direction substantially perpendicular to a substrate. The method includes programming a first memory cell of the multiple memory cells, and programming a second memory cell of the multiple memory cells after the first memory cell is programmed, the second memory cell being closer to the substrate than the first memory cell. A diameter of a channel hole of the first memory cell is larger than a diameter of a channel hole of the second memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.