Systems and methods for adapting to changing characteristics of multi-level cells in solid-state memory
US9026867B1 · kind B1 · utility
22Cited by
60References
20Claims
0Family size
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Key dates
| Filing date | Mar 15, 2013 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | Jul 3, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/4402
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatus and methods provide relatively low uncorrectable bit error rates, low write amplification, long life, fast and efficient retrieval, and efficient storage density such that a solid-state drive (SSD) can be reliably implemented using various types of memory cells, including relatively inexpensive multi-level cell flash. One embodiment intelligently coordinates remapping of bad blocks with error correction code control, which eliminates the tables used to avoid bad blocks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.