System and method for arbitrary metal spacing for self-aligned double patterning
US9026973B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2013 |
| Grant date | May 5, 2015 |
| Priority date | — |
| Expiry date | May 7, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes a first conductive structure of a device configured to have a first voltage potential, a second conductive structure of the device configured to have a second voltage potential that is different than the first voltage potential, and a peacekeeper structure disposed between and separating the first conductive structure and the second conductive structure. The peacekeeper structure is separated from at least one of the first conductive structure and the second conductive structure by a fixed spacing distance for conductive lines for a self-aligned double patterning (“SADP”) process from the integrated circuit was formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.