Substrate processing apparatus
US9028614B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2012 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Feb 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67757
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.