Trench isolation MOS P-N junction diode device and method for manufacturing the same
US9029235B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2014 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | May 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/045
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench isolation metal-oxide-semiconductor (MOS) P-N junction diode device and a manufacturing method thereof are provided. The trench isolation MOS P-N junction diode device is a combination of an N-channel MOS structure and a lateral P-N junction diode, wherein a polysilicon-filled trench oxide layer is buried in the P-type structure to replace the majority of the P-type structure. As a consequence, the trench isolation MOS P-N junction diode device of the present invention has the benefits of the Schottky diode and the P-N junction diode. That is, the trench isolation MOS P-N junction diode device has rapid switching speed, low forward voltage drop, low reverse leakage current and short reverse recovery time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.