Method of fabricating Ag-doped Te-based nano-material and memory device using the same
US9029248B2 · kind B2 · utility
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Key dates
| Filing date | Oct 30, 2008 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Aug 20, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/943
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A nano-ionic memory device is provided. The memory device includes a substrate, a chemically inactive lower electrode provided on the substrate, a solid electrolyte layer provided on the lower electrode and including a silver (Ag)-doped telluride (Te)-based nano-material, and an oxidizable upper electrode provided on the electrolyte layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.