Semiconductor device fabrication method and semiconductor device
US9029261B2 · kind B2 · utility
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2References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 27, 2014 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Mar 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method of fabricating a semiconductor device, the method including: forming a semiconductor component portion at a first surface of a substrate; applying a grinding treatment to a second surface of the substrate that is opposite from the first surface to form a fracture surface; applying a fracture surface removal treatment to predetermined positions of the fracture surface of the second surface; and forming an electrode at the second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.