Programmable SCR for ESD protection

US9029910B2 · kind B2 · utility

Inventor

• Robert N. Rountree · Cody, US

Key dates

• Filing date: Oct 8, 2014
• Grant date: May 12, 2015
• Expiry date: Oct 8, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/713

Abstract

A programmable semiconductor controlled rectifier (SCR) circuit is disclosed. The SCR includes a first terminal (310) and a second terminal (308). A first lightly doped region (304) having a first conductivity type (N−) is formed on a second lightly doped region (314) having a second conductivity type (P−). A first heavily doped region having the second conductivity type (P+) is formed within the first lightly doped region at a face of the substrate and coupled to the first terminal. A second heavily doped region having the first conductivity type (N+) is formed within the second lightly doped region at the face of the substrate and coupled to the second terminal. A third heavily doped region (400) having the second conductivity type (P+) is formed at the face of the substrate between the first and second heavily doped regions and electrically connected to the second lightly doped region. A first transistor (316) having a control terminal and having a first current path terminal coupled to the third heavily doped region and a second current path terminal coupled to the second terminal is arranged to control a holding voltage of the circuit.