Semiconductor device and manufacturing method thereof
US9029953B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2013 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Oct 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/141
Abstract
A semiconductor device includes a base region of a second conduction type provided over a drain region of a first conduction type, an outer peripheral well region of a second conduction type provided to cover the outer peripheral end of the base region and having an impurity concentration lower than that of the base region, a buried electrode buried in the semiconductor substrate not to overlap the outer peripheral well region, plural gate electrodes connected to the buried electrode and buried in the substrate such that each of them is adjacent to a source region, a gate interconnect provided over the substrate to overlap a portion of the outer peripheral well region in a plan view and connected to the buried electrode, and a grounding electrode provided over the substrate and connected to a portion of the outer peripheral well region not overlapping the gate interconnect in a plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.