Semiconductor device and manufacturing method therefor
US9029954B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 8, 2012 |
| Grant date | May 12, 2015 |
| Priority date | — |
| Expiry date | Jun 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0181
Abstract
A semiconductor device according to the present invention has an n-type MIS transistor. The n-type MIS transistor has a first active region surrounded by a device isolation region in a semiconductor substrate, a first gate insulating film having a first high-dielectric-constant insulating film containing a first metal for adjustment, and a first electrode formed on the first gate insulating film. A protrusion amount of one end of the first high-dielectric-constant insulating film on the first device isolation part is smaller than a protrusion amount of an end of the first gate electrode above the first device isolation part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.