Wet-chemical systems and methods for producing black silicon substrates
US9034216B2 · kind B2 · utility
2Cited by
30References
19Claims
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Key dates
| Filing date | Nov 11, 2010 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Feb 11, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.