Method of fabricating vertical type light-emitting diode and method of separating layers from each other
US9034676B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Jul 22, 2010 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Mar 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
The present invention provides a method of fabricating a vertical type light-emitting diode and a method of separating layers from each other. Crystalline rods are provided on a lower layer or a lower substrate. The crystalline rods comprise ZnO. A layer which constitutes light-emitting diode or a light-emitting diode structure is formed on the crystalline rods, and the lower substrate is separated therefrom. The crystalline rods are dissolved during the separation. The formation of the crystalline rods is achieved by the formation of a seed layer and selective growth based on the seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.