Method for manufacturing semiconductor device
US9034709B2 · kind B2 · utility
0Cited by
0References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2013 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Feb 20, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device, includes forming a first gate oxide film in each of a first region and a second region by thermally oxidizing a silicon substrate, forming a CVD oxide film on the first gate oxide film, implanting fluorine into each of the first region and the second region through the CVD oxide film and the first gate oxide film, removing the CVD oxide film from the first gate oxide film in the second region, removing the first gate oxide film from the second region, and forming a second gate oxide film in the second region by thermally oxidizing the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.