Patent · US Active

Nanoparticle-based memristor structure

US9035272B2 · kind B2 · utility

5Cited by

5References

18Claims

0Family size

Assignee

HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. · US

Inventors

Xia Sheng · Palo Alto, US
Zhang-Lin Zhou · Palo Alto, US
Richard H. Henze · Redwood City, US

Key dates

Filing date	Jan 16, 2013
Grant date	May 19, 2015
Priority date	—
Expiry date	Jan 16, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/83
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A memristor structure has two electrodes sandwiching an insulating region, and includes a nanoparticle providing a conducting path between the two electrodes, wherein either the insulating region comprises an inorganic material and nanoparticle comprises a solid nanoparticle or a core/shell nanoparticle or the insulating region comprises an inorganic or organic material and the nanoparticle comprises a core/shell nanoparticle.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.