Polymeric materials for use in metal-oxide-semiconductor field-effect transistors

US9035287B2 · kind B2 · utility

Assignee

• Polytec GmbH · CA

Inventors

• Antonio Facchetti · Chicago, US
• Daniel A. Batzel · Skokie, US
• Jing Chen · Lanzhou, CN
• Chun Huang · Skokie, US
• Shaofeng Lu · Skokie, US
• William Christopher Sheets · Chicago, US
• Jingqi Wang · Evanston, US
• Yu Xia · Northbrook, US

Key dates

• Filing date: Mar 15, 2013
• Grant date: May 19, 2015
• Expiry date: Nov 30, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/471

Abstract

Disclosed are polysulfone-based materials that can be used as active and/or passive components in various electronic, optical, and optoelectronic devices, particularly, metal-oxide-semiconductor field-effect transistors. For example, various metal-oxide-semiconductor field-effect transistors can include a dielectric layer and/or a passivation layer prepared from such polysulfone-based materials and exhibit good device performance.