Transistors, methods of manufacturing the same, and electronic devices including transistors
US9035294B2 · kind B2 · utility
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28Claims
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Key dates
| Filing date | Jul 17, 2012 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Jan 12, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24479
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A transistor may include a channel layer formed of an oxide semiconductor. The oxide semiconductor may include GaZnON, and a proportion of Ga content to a total content of Ga and Zn of the channel layer is about 0.5 to about 4.5 at %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.