Thin-film transistor and zinc oxide-based sputtering target for the same
US9035297B2 · kind B2 · utility
4Cited by
0References
10Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 28, 2013 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Jun 28, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/0036
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.