Compound semiconductor device comprising electrode above compound semiconductor layer and method of manufacturing the same
US9035353B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2012 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Dec 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
A HEMT has a compound semiconductor layer, a protection film which has an opening and covers an upper side of the compound semiconductor layer, and a gate electrode which fills the opening and has a shape riding on the compound semiconductor layer, wherein the protection film has a stacked structure of a lower insulating film not containing oxygen and an upper insulating film containing oxygen, and the opening includes a first opening formed in the lower insulating film and a second opening formed in the upper insulating film and wider than the first opening, the first opening and the second opening communicating with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.