Compound semiconductor device and manufacturing method therefor
US9035357B2 · kind B2 · utility
0Cited by
4References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 10, 2014 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Mar 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An HEMT includes, on an SiC substrate, a compound semiconductor layer, a silicon nitride (SiN) protective film having an opening and covering the compound semiconductor layer, and a gate electrode formed on the compound semiconductor layer so as to plug the opening. In the protective film, a projecting portion projecting from a side surface of the opening is formed at a lower layer portion 6a.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.