Method for fabricating thin-film semiconductor device and thin-film semiconductor device
US9035385B2 · kind B2 · utility
2Cited by
12References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2012 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Dec 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
A thin-film semiconductor device having two thin-film transistors, wherein each of the two thin-film transistors includes: a gate electrode; a gate insulating film; a semiconductor layer; a channel protection layer; an intrinsic semiconductor layer; a contact layer in contact with a portion of sides of the channel region; a source electrode on the contact layer; and a drain electrode opposite to the source electrode on the contact layer, wherein the contact layer of one of the two thin-film transistors has a conductivity type different from a conductivity type of the contact layer of the other of the two thin-film transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.