Avalanche photodiode detector
US9035410B2 · kind B2 · utility
4Cited by
8References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 12, 2008 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Feb 2, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An avalanche photodiode detector is provided. The avalanche photodiode detector comprises an absorber region having an absorption layer for receiving incident photons and generating charged carriers; and a multiplier region having a multiplication layer; wherein the multiplier region is on a mesa structure separate from the absorber region and is coupled to the absorber region by a bridge for transferring charged carriers between the absorber region and multiplier region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.