Patent · US Active

Component having through-hole plating, and method for its production

US9035432B2 · kind B2 · utility

2Cited by

0References

16Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Jochen Reinmuth · Reutlingen, DE
Heribert Weber · Leverkusen, DE
Timo Schary · Grötzingen, DE
Yvonne Bergmann · Reutlingen, DE

Key dates

Filing date	Jun 11, 2013
Grant date	May 19, 2015
Priority date	—
Expiry date	Jun 11, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a component having a semiconductor substrate with through-hole plating is provided, the through-plating being surrounded by a recess, and the semiconductor substrate having a first layer on one side, which covers the recess on the first side. The semiconductor substrate has a second layer on a second side, which covers the recess on the second side, and the through-hole plating is surrounded by a ring structure which is produced from the semiconductor substrate. The recess surrounding the ring structure is produced in the same process step or at the same time as the recess for the through-hole plating.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.