Electron multiplier detector formed from a highly doped nanodiamond layer
US9035540B2 · kind B2 · utility
1Cited by
4References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 17, 2011 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | May 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2231/50047
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system for detecting electromagnetic radiation or an ion flow, including an input device for receiving the electronic radiation or the ion flow and emitting primary electrons in response, a multiplier of electrons in transmission, for receiving the primary electrons and emitting secondary electrons in response, and an output device for receiving the secondary electrons and emitting an output signal in response. The electron multiplier includes at least one nanocrystalline diamond layer doped with boron in a concentration of higher than 5·1019 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.