High impedance microwave electronics
US9035704B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2010 |
| Grant date | May 19, 2015 |
| Priority date | — |
| Expiry date | Mar 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6655
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
High impedance, high frequency nanoscale device electronics configured to interface with low impedance loads include an impedance transforming stage constructed of multiple nanoscale devices, such as carbon nanotube field-effect transistors. In an embodiment of the present invention, an impedance transforming output stage of a multistage amplifier is configured to drive a 50 ohm transmission line with unity voltage gain using multiple carbon nanotube field-effect transistors in parallel. In a further embodiment, a receiver provided for an electronically steered receive array is a monolithic, lumped-element system formed from nanoscale devices and configured to interface with the external electrical systems via a single transmission line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.