Three dimensional branchline coupler using through silicon vias and design structures

US9035719B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Barbara S. DeWitt · South Burlington, US
• Essam Mina · South Burlington, US
• BM Farid Rahman · Columbia, US
• Guoan Wang · South Burlington, US
• Wayne H. Woods, Jr. · Burlington, US

Key dates

• Filing date: Aug 23, 2013
• Grant date: May 19, 2015
• Expiry date: Nov 13, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Telecommunications
• WIPO sector: Electrical engineering

Abstract

A three dimensional (3D) branchline coupler using through silicon vias (TSV), methods of manufacturing the same and design structures are disclosed. The method includes forming a first waveguide structure in a first dielectric material. The method further includes forming a second waveguide structure in a second dielectric material. The method further includes forming through silicon vias through a substrate formed between the first dielectric material and the second dielectric material, which connects the first waveguide structure to the second waveguide structure.