System and method for monitoring in real time the operating state of an IGBT device
US9039279B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2013 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Jan 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/0806
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system and method are provided for monitoring in real time the operating state of an IGBT device, to determine a junction temperature and/or the remaining lifetime of an IGBT device. The system includes a differential unit configured to receive a gate-emitter voltage characteristic of the IGBT device to be measured and to differentiate the gate-emitter voltage characteristic to obtain pulses correlating with edges formed by a Miller plateau phase during a switch-off phase of the IGBT device. The system also includes a timer unit configured to measure the time delay between the obtained pulses indicating the start and end of the Miller plateau phase during the switch-off phase of the IGBT device, and a junction temperature calculation unit configured to determine at least one of the junction temperature of the IGBT device and/or the remaining lifetime of the IGBT device based on the measured time delay.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.