Patent · US Active

Method for detaching a semiconductor chip from a foil

US9039867B2 · kind B2 · utility

3Cited by

4References

5Claims

0Family size

Assignee

Besi Switzerland AG · CH

Inventors

Ernst Barmettler · Sankt Moritz, CH
Fabian Hurschler · Steinhausen, CH
Brian Pulis · Steinhausen, CH

Key dates

Filing date	Mar 15, 2013
Grant date	May 26, 2015
Priority date	—
Expiry date	May 19, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T156/1983
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for detaching a semiconductor chip from a foil uses a die ejector comprising plates having a straight supporting edge and an L-shaped supporting edge comprises:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.