Laser ablation technique for electrical contact to buried electrically conducting layers in diamond
US9040345B2 · kind B2 · utility
0Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2013 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Aug 30, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of laser ablation for electrical contact to a buried electrically conducting layer in diamond comprising polishing a single crystal diamond substrate having a first carbon surface, implanting the diamond with a beam of 180 KeV followed by 150 KeV C+ ions at fluencies of 4×1015 ions/cm2 and 5×1015 ions/cm2 respectively, forming an electrically conducting carbon layer beneath the first carbon surface, and ablating the single crystal diamond which lies between the electrically conducting layer and the first carbon surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.