Method of manufacturing a MOS type semiconductor device
US9040362B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 10, 2014 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Oct 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a MOS type semiconductor device, includes, before forming a semiconductor functional structure including a necessary MOS gate structure on one principal surface of a silicon semiconductor substrate, in the order recited, a first step of heating the silicon semiconductor substrate in an oxygen-containing atmosphere under heat treatment conditions including a heat treatment temperature of higher than 1,280° C. and a heat treatment time necessary for introducing oxygen up to a solid solution limit concentration in the silicon semiconductor substrate as a whole body; and a second step of holding the silicon semiconductor substrate at a specified temperature in a range from 1,000° C. to 1,200° C. The method achieves small turn-off loss and little variation of ON voltages without controlling a collector layer to a lower concentration than the conventional technology.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.