Patent · US Active

Method for processing a carrier, method for fabricating a charge storage memory cell, method for processing a chip, and method for electrically contacting a spacer structure

US9040375B2 · kind B2 · utility

0Cited by

4References

17Claims

0Family size

Assignee

Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

Robert Strenz · Radebeul, DE
Mayk Roehrich · Dresden, DE
Wolfram Langheinrich · Dresden, DE
John Power · Kilmacthomas, IE
Danny Pak-Chum Shum · Poughkeepsie, US
Martin Stiftinger · Stockdorf, DE

Key dates

Filing date	Jan 28, 2013
Grant date	May 26, 2015
Priority date	—
Expiry date	Jul 7, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/037
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for processing a carrier accordance with various embodiments may include: forming a structure over the carrier, the structure including at least two adjacent structure elements arranged at a first distance between the same; depositing a spacer layer over the structure, wherein the spacer layer may be deposited having a thickness greater than half of the first distance, wherein the spacer layer may include electrically conductive spacer material; removing a portion of the spacer layer, wherein spacer material of the spacer layer may remain in a region between the at least two adjacent structure elements; and electrically contacting the remaining spacer material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.