Method for forming patterned doping regions
US9040401B1 · kind B1 · utility
1Cited by
23References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2015 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Feb 19, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.