Galium-nitride light emitting device having a microarray-type structure
US9041012B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 16, 2012 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Jan 18, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/032
Abstract
A microarray-type nitride light emitting device includes a light emitting semiconductor layer; and a multilayered transparent contact layer to divide a plane of the light emitting semiconductor layer into a plurality of microarray-type light emitting regions and a plurality of connect-divided light emitting regions. The multilayered transparent contact layer includes a first transparent contact layer that is composed of a material having a resistance value which is heat determinable, and that divides the plane of the light emitting semiconductor layer into the plurality of microarray-type light emitting regions; a transparent resistor layer that is defined within the first transparent contact layer, that is composed of the material having a resistance value which is heat determinable and has a resistance that is higher than that of the first transparent contact layer; and a second transparent contact layer to connect the plurality of microarray-type light emitting regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.