Light emitting diode component comprising polysilazane bonding layer
US9041034B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2011 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Oct 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0361
Abstract
In one embodiment, a semiconductor component, such as a wavelength converter wafer, is described wherein the wavelength converter is bonded to an adjacent inorganic component with a cured bonding layer comprising polysilazane polymer. The wavelength converter may be a multilayer semiconductor wavelength converter or an inorganic matrix comprising embedded phosphor particles. In another embodiment, the semiconductor component is a pump LED component bonded to an adjacent component with a cured bonding layer comprising polysilazane polymer. The adjacent component may the described wavelength converter(s) or another component comprised of inorganic material(s) such as a lens or a prism. Also described are methods of making semiconductor components such as wavelength converters and LED's.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.