Image sensors including channel stop regions surrounding photodiodes and methods of fabricating the same
US9041073B2 · kind B2 · utility
7Cited by
5References
17Claims
0Family size
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Key dates
| Filing date | Jun 26, 2013 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Jul 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
Abstract
Image sensors are provided. In the image sensor, an area of a device isolation layer may be reduced and elements may be isolated from each other by a channel stop region extending between the photoelectric conversion region and the device isolation layer, such that a dark current property of the image sensor may be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.