Nonvolatile semiconductor memory device
US9041091B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 2, 2013 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Aug 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
According to one embodiment, a device includes a fin type active area on a semiconductor substrate, the active area having an upper surface with a taper shape, having a width in a first direction, and extending in a second direction intersect with the first direction, a first insulating layer on the active area, a charge storage layer on the first insulating layer, the charge storage layer having an upper surface with a taper shape, a second insulating layer covering the upper surface of the charge storage layer, and a control gate electrode on the second insulating layer, the control gate electrode extending in the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.