Avalanche photodiode
US9041136B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Oct 19, 2012 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Oct 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2255
Abstract
According to one aspect, there is provided an avalanche photodiode comprising a first semiconductor layer that absorbs photons of a first wavelength range and having a first energy bandgap; a second semiconductor layer that absorbs photons of a second wavelength range and having a second energy bandgap, the second energy bandgap being different from the first energy bandgap; and a control layer between the first semiconductor layer and the second semiconductor layer, the control layer having a third energy bandgap engineered to suppress carriers created from dark current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.