Power amplifier modules including related systems, devices, and methods
US9041472B2 · kind B2 · utility
Assignee
Inventors
- Howard E. Chen
- Yifan Guo
- Dinhphuoc Vu Hoang
- Mehran Janani
- Tin Myint Ko
- Philip John Lehtola
- Anthony James LoBianco
- Hardik Bhupendra Modi
- Hoang Mong Nguyen
- Matthew Thomas Ozalas
- Sandra Louise Petty-Weeks
- Matthew Sean Read
- Jens Albrecht Riege
- David Steven Ripley
- Hongxiao Shao
- Hong Shen
- Weimin Sun
- Hsiang-Chih Sun
- Patrick Lawrence Welch
- Peter J. Zampardi, Jr.
- Guohao Zhang
Key dates
| Filing date | Jun 13, 2013 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Nov 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.